Deterministic patterned growth of high-mobility large-crystal graphene: a path towards wafer scale integration

TL;DR

This paper presents a deterministic seed-based chemical vapor deposition method for growing large, high-quality single-crystal graphene arrays on pre-patterned copper substrates, enabling wafer-scale integration.

Contribution

It introduces a novel patterning approach for controlled growth of large graphene single-crystals suitable for wafer-scale device fabrication.

Findings

Achieved large single-crystals up to several hundred microns

Demonstrated high carrier mobility of 21,000 cm2/Vs

Enabled contamination-free transfer of graphene

Abstract

We demonstrate rapid deterministic (seeded) growth of large single-crystals of graphene by chemical vapour deposition (CVD) utilising pre-patterned copper substrates with chromium nucleation sites. Arrays of graphene single-crystals as large as several hundred microns are grown with a periodicity of up to 1 mm. The graphene is transferred to target substrates using aligned and contamination-free semi-dry transfer. The high quality of the synthesised graphene is confirmed by Raman spectroscopy and transport measurements, demonstrating room-temperature carrier mobility of 21 000 cm2 / V s when transferred on top of hexagonal boron nitride. By tailoring the nucleation of large single-crystals according to the desired device geometry, it will be possible to produce complex device architectures based on single-crystal graphene, thus paving the way to the adoption of CVD graphene in wafer-scale fabrication.