Graded index SCH transistor laser: Analysis of various confinement structures

TL;DR

This paper proposes a new confinement structure for single quantum well transistor lasers, significantly improving their optoelectronic performance by reducing threshold current and increasing optical output power.

Contribution

It introduces a novel confinement structure and a comprehensive analysis including drift effects, leading to substantial performance enhancements.

Findings

Threshold current reduced by 67%

Optical output power increased by 37%

Enhanced optoelectronic performance with new confinement design

Abstract

New configuration of confinement structure is utilized to improve optoelectronic performances, including threshold current, AC current gain as well as optical bandwidth and optical output power of single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters including, electron mobility, recombination lifetime, optical confinement factor, electron capture time and photon lifetime is calculated for new structures. Based on solving continuity equation in separate confinement heterostructures, threshold current reduces 67% and optical output power increases 37%.