Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition

TL;DR

This paper explores different oxidation methods for buffer layer engineering on graphene to improve the quality of atomic layer deposition of high-k oxides, enhancing device performance.

Contribution

It introduces optimized oxidation techniques for Y buffer layers on graphene, enabling better gate insulator capacitance and device characteristics.

Findings

Enhanced capacitance of Y2O3 insulator achieved

Large Ion/Ioff ratio demonstrated in bilayer graphene

Oxidation method impacts buffer layer quality

Abstract

The integration of high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to the highest oxidation ability in rare earth elements and various oxidation methods (atmospheric, high-pressure O2 and ozone) were applied to the Y metal buffer layer. By optimizing oxidation conditions of the top gate insulator, we successfully improve the capacitance of top gate Y2O3 insulator and demonstrate a large Ion/Ioff ratio for bilayer graphene under an external electric field.