Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance

TL;DR

This paper proposes a novel method to amplify the Voltage Controlled Magnetic Anisotropy (VCMA) effect using negative capacitance, aiming to enable ultra-low power magnetic memory devices.

Contribution

It introduces a new approach to enhance VCMA effect leveraging negative capacitance, supported by physical simulation and analysis.

Findings

Feasibility of VCMA amplification demonstrated through simulations

Potential for ultra-low power magnetic memory applications

Addresses small VCMA coefficient issue in nanoscale MTJs

Abstract

The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic Random Access Memory (STT-MRAM) to mass market. By utilizing Voltage Controlled Magnetic Anisotropy (VCMA) effect, the MTJ can be switched by voltage effect and is postulated to achieve ultra-low power (fJ). However, the VCMA coefficient measured in experiments is far too small for MTJ dimension below 100 nm. Here in this work, a novel approach for the amplification of VCMA effect which borrow ideas from negative capacitance is proposed. The feasibility of the proposal is proved by physical simulation and in-depth analysis.