Direct observation of electron emission as a result of a VVV Auger transition in the valence band of Graphene

TL;DR

This study provides the first direct evidence of electron emission caused by VVV Auger transitions in graphene, using positron annihilation to explore valence band relaxation and hole decay processes.

Contribution

It demonstrates the detection of VVV Auger electron emission in graphene via positron annihilation, linking experimental data with density functional theory calculations.

Findings

Electron emission peaks up to ~12 eV observed

Peak intensity is ~17 times larger than previous measurements

Theoretical analysis confirms VVV Auger transition origin

Abstract

We report the first direct observation of electron emission into the vacuum as a result of a VVV Auger transition resulting from the relaxation of a deep hole in the valence band. A beam of low energy (<1.25eV) positrons was used to deposit positrons onto the surface of samples consisting of single layer graphene, multi-layer graphene and graphite. The distribution of electrons emitted from the samples as a result of the annihilation of the positron showed peak extending up to ~12 eV with a maximum at ~4eV. The observed peak was ~17 times larger than the previously observed annihilation induced C KVV peak. An analysis based upon a density functional theory calculation of the positron annihilation rates indicates that the width and intensity of the peak is consistent with electron emission resulting from VVV Auger transition excited by the annihilation of valence band electrons. Good agreement was found between the data from the single layer graphene on Cu surface with a theoretical line shape found from a self-folding of the density of states for a free standing graphene layer. The agreement between the theoretical and measured intensities for the KVV and VVV transitions indicates that the branching ratio for holes to decay via an Auger transition is nearly the same in both cases (i.e. close to 100%). Our results suggest the possibility of using annihilation induced VVV Auger spectroscopy to study the properties of the local density of states and the hole decay processes in materials in which the valence band width exceeds the work function.