Dirac Fermions induced in strained zigzag phosphorus nanotubes and the applications in field effect transistors

TL;DR

This study demonstrates the engineering of Dirac fermions in zigzag phosphorus nanotubes through strain, revealing their potential for high-performance, strain-sensitive electronic devices such as field effect transistors.

Contribution

First-principle computational analysis of Dirac fermions in strained zigzag phosphorus nanotubes and their application in FETs and strain sensors.

Findings

Dirac fermions appear at specific lattice parameters (3.90{ A} to 4.10{ A})

FETs based on ZPNTs show effective gate modulation at certain strains

ZPNTs are promising for strain sensor applications

Abstract

In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principle computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (Lc) along axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at Lc ranging from 3.90{\AA} to 4.10{\AA}. In particular, a field effect transistor (FET) based on a 12-ZPNT (with 12 unit cells in transverse direction) exhibits semiconductor behaviors with efficient gate-effect modulation at Lc= 4.60{\AA}. However, only weak gate modulation is demonstrated when the nanotube becomes semimetal at Lc= 4.10{\AA}. This study indicates that ZPNTs are profoundly appealing in applications in the strain sensors. Our findings pave the way for development of high-performance strain-engineered electronics based on Dirac Fermions in 1D materials.