Controlled Electrode Magnetization Alignment in Planar Elliptical Ferromagnetic Break Junction Devices

TL;DR

This paper demonstrates a method to control the magnetization alignment in ferromagnetic break junctions with elliptical leads, enabling switching between parallel and antiparallel states using an in-plane magnetic field, which is crucial for magnetoresistive applications.

Contribution

It introduces a fabrication and measurement approach for controlling magnetization in planar elliptical ferromagnetic break junctions, addressing a key challenge in molecular and quantum dot contact devices.

Findings

Magnetization can be switched between parallel and antiparallel states using an in-plane field.

Elliptical leads enable controllable magnetization alignment in the tunneling regime.

Finite-element micromagnetic simulations support experimental observations.

Abstract

Controlling the magnetization reversal process of magnetic elements is important for a wide range of applications that make use of magnetoresistive effects, but is difficult to achieve for devices that require adjacent thin film structures capable of contacting an individual molecule or quantum dot. We report on the fabrication and measurement of ferromagnetic break junction devices with planar, elliptical leads to address the particular challenge of controlling the relative magnetization alignment between neighboring electrodes. Low temperature transport measurements, supported by finite-element micromagnetic simulations, are used to characterize the magnetoresistance response across a range of conductance levels. We demonstrate that an in-plane external field applied parallel to the hard axis of the ellipses may be used to controllably switch the magnetization of the source and drain electrodes between monodomain-like parallel and antiparallel configurations for devices in the tunneling regime.