A Simplified Model for Fast Optimization of Free-Electron Laser Oscillator

TL;DR

This paper introduces a simplified theoretical model for free-electron laser oscillators that efficiently predicts laser behavior by analytically calculating gain and power growth, validated against detailed simulations.

Contribution

The paper presents a new simplified model for FELO that preserves core physics and improves computational efficiency over traditional simulation methods.

Findings

Model accurately predicts infrared and X-ray FELO performance.

Results agree with GENESIS and OPC simulations.

Significantly reduces computation time for FELO analysis.

Abstract

A simplified theoretical model for free-electron laser oscillator (FELO) simulation which reserves the main physics is proposed. In stead of using traditional macro particles sampling method, the theoretical model takes advantages of low gain theory to calculate the optical power single-pass gain in the undulator analytically, and some reasonable approximations are made to simplify the calculation of power growth in the cavity. The theoretical analysis of single-pass gain, power growth, time-dependent laser profile evolution and cavity desynchronism are accomplished more efficiently. We present the results of infrared wavelength FELO and X-ray FELO with the new model. The results is checked by simulation with GENESIS and OPC which demonstrates the validity of the theoretical model.