Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides

TL;DR

This study demonstrates that single-layer WS$_2$ maintains its electronic structure when transferred onto high-$$ transition metal oxide substrates, enabling advanced interface studies and potential optoelectronic applications.

Contribution

It shows that WS$_2$ can be transferred onto high-$$ oxides like TiO$_2$ and SrTiO$_3$, preserving its electronic properties for detailed analysis.

Findings

WS$_2$ retains its electronic structure on high-$$ substrates.

Strong spin-orbit splitting of 420 meV observed.

Direct band gap at the valence band maximum confirmed.

Abstract

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$\kappa$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$\kappa$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials.