P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

TL;DR

This study explores InGaN homojunctions with 10-40% indium, demonstrating improved photoresponse up to 600 nm and analyzing how indium content affects material and electrical properties.

Contribution

It presents the synthesis and characterization of InGaN homojunctions with extended photoresponse, highlighting the effects of indium content and Mg incorporation on device performance.

Findings

Enhanced carrier extraction with p-InGaN layers

Photoresponse extended to 600 nm

Mg reduces stacking fault density

Abstract

We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarization discontinuities on the device performance. We demonstrate that the presence of Mg does not perturb the In incorporation in InGaN, and it leads to a significant reduction of the stacking fault density. p-In0.3Ga0.7N layers with a hole concentration of 3.2x1018 cm-3 are demonstrated. InGaN homojunction devices show a peak EQE = 14+-2% in the blue-to-orange spectral region, and an extended cutoff to 600 nm.