Temperature dependent giant resistance anomaly in LaAlO3/SrTiO3 nanostructures
M. Z. Minhas, A. M\"uller, F. Heyroth, H. H. Blaschek, and G. Schmidt

TL;DR
Nanostructuring LAO/STO interfaces reveals temperature-dependent resistance peaks linked to phase transitions and filament dynamics, challenging previous assumptions based on larger structures.
Contribution
This study uncovers a novel temperature anomaly in nanostructured LAO/STO interfaces caused by filament formation and phase transitions, which was not observed in larger structures.
Findings
Resistance peaks between 50 and 100 K in nanostructures
Filament formation at domain walls during cooling
Complete conductance loss during warm-up due to filament interruption
Abstract
The resistance of the electron gas at the interface between the two band insulators LaAlO3 (LAO) and SrTiO3 (STO) typically drops monotonically with temperature and R/T curves during cooling and warm-up look identical for large area structures. Here we show that if the LAO/STO is laterally restricted by nanopatterning the resistance exhibits a temperature anomaly. Warming up nanostructures from low temperatures leads to one or two pronounced resistance peaks between 50 and 100 K not observed for larger dimensions. During cool-down current filaments emerge at the domain walls that form during the well-known structural phase transition of the STO substrate. During warm-up the reverse phase transition can interrupt filaments before the sheet conductivity which dominates at higher temperature is reestablished. Due to the limited number of filaments in a nanostructure this process can result…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsElectronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Ferroelectric and Negative Capacitance Devices
