Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

TL;DR

This study successfully synthesized low-moment Cr2CoGa thin films with spin gapless semiconducting properties using molecular beam epitaxy, demonstrating potential for spintronic applications.

Contribution

First demonstration of phase-segregation-free Cr2CoGa thin films with confirmed spin gapless semiconducting behavior via MBE.

Findings

Low magnetic moment from antiferromagnetic coupling

Semiconductor-like resistivity with 87 meV activation energy

Potential for spintronic device applications

Abstract

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure, however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with SQUID magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.