Tunable bandgap and spin-orbit coupling by composition control of MoS$_{2}$ and MoO$_{x}$ (X=2 and 3) compounds

TL;DR

This study demonstrates how composition control of MoS₂ and MoOₓ compounds affects their electrical, optical, and spin-orbit properties, enabling tunable bandgaps and conductivity types for potential optoelectronic applications.

Contribution

It introduces a method to systematically tune the properties of MoS₂ and MoOₓ compounds through composition control during electrodeposition.

Findings

Optical and electrical bandgaps are tunable by composition.

A sharp transition from p-type to n-type conductivity is observed.

Spin-orbit interaction of Mo 3d doublet increases with reduced MoO₃ content.

Abstract

We report on composition controlled MoS$_{2}$ and MoO$_{x}$ (x=2 and 3) compounds electrodeposited on Flourine dopped Tin Oxide (FTO) substrate. It was observed that the relative content has systematic electrical and optical changes for different thicknesses of layers ranging from $\approx$20 to 540 nm. Optical and electrical bandgaps reveals a tuneable behavior by controlling the relative content of compounds as well as a sharp transition from p to n-type of semiconductivity. Moreover, spin-orbit interaction of Mo 3d doublet enhances by reduction of MoO$_{3}$ content in thicker films. Our results convey path-way of applying such compounds in optoelectronics and nanoelectronics devices.