Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors

TL;DR

This paper introduces a new class of ionic semiconductors called chalcogenide perovskites, synthesized via high-temperature sulfurization, with tunable band gaps suitable for energy and sensing applications.

Contribution

It reports the synthesis, structural characterization, and band gap tuning of inorganic chalcogenide perovskites, a novel class of ionic semiconductors.

Findings

Confirmed direct band gap semiconductors with band gaps 1.73-2.87 eV

Demonstrated tunable band gaps through anion alloying

Provided structural and compositional analysis of new materials

Abstract

We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.