Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO$_3$/SrTiO$_3$ interfaces on $\delta$-doping

TL;DR

This study demonstrates how $ ext{δ}$-doping with LaCoO$_3$ significantly enhances spin-orbit interaction at LaTiO$_3$/SrTiO$_3$ interfaces, affecting spin relaxation and magnetoresistance properties.

Contribution

It reveals the modulation of spin-orbit interaction via δ-doping and its impact on spin relaxation mechanisms at oxide interfaces.

Findings

Spin-orbit scattering time decreases by nearly 3 orders of magnitude with δ-doping.

Inelastic scattering time remains almost constant regardless of δ-doping thickness.

In-plane anisotropic magnetoresistance is linked to spin-orbit coupling effects.

Abstract

We present a study of modulation of spin-orbit interaction (SOI) at the interface of LaTiO$_3$/SrTiO$_3$ by $\delta$-doping with an iso-structural ferromagnetic perovskite LaCoO$_3$. The sheet carrier density at the interface decreases exponentially with $\delta$-doping thickness. We have explored that the spin-orbit scattering time ($\tau_{so}$) can be decreased by nearly 3 orders of magnitude, whereas the inelastic scattering time ($\tau_{i}$) remains almost constant with $\delta$-doping thickness. We have also observed that the $\tau_{i}$ varies almost inversely proportional to temperature and $\tau_{so}$ remains insensitive to temperature, which suggest that the spin relaxation in these interfaces follows D'yakonov-Perel mechanism. The observed in-plane anisotropic magnetoresistance is attributed to the mixing of the spin up and spin down states of d-band at Fermi level due to SOI.