Dynamical Conductivity of Dirac Materials
Luxmi Rani, Navinder Singh

TL;DR
This paper investigates the dynamical conductivity of graphene, revealing frequency and temperature-dependent behaviors of the scattering rate, including new power-law regimes, using the memory function formalism beyond the DC limit.
Contribution
It extends previous DC resistivity results to finite frequencies, providing new insights into the frequency and temperature dependence of the scattering rate in Dirac materials.
Findings
At low frequencies, the scattering rate scales as ω^4 at zero temperature.
At high frequencies and temperatures, the scattering rate becomes linear in temperature.
The study identifies a Holstein Mechanism with distinct power laws in Dirac materials.
Abstract
For graphene (a Dirac material) it has been theoretically predicted and experimentally observed that DC resistivity is proportional to when the temperature is much less than Bloch- Gr\"{u}neisen () temperature and T linear in opposite case (). Going beyond the DC case, we investigate the dynamical conductivity in graphene using the powerful method of memory function formalism. In the DC (zero frequency regime) limit, we obtained the above mention behavior which was previously obtained using the Bloch-Boltzmann kinetic equation. In the finite frequency regime, we obtained several new results: (1) the generalized Drude scattering rate, in the zero temperature limit, shows behavior at low frequencies () and saturates at higher frequencies. We also observed the Holstein Mechanism, however, with different power…
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Taxonomy
TopicsGraphene research and applications · Surface and Thin Film Phenomena · Quantum and electron transport phenomena
