Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

TL;DR

This paper presents a Monte Carlo simulation of spin transport in a strained InGaAs spinFET, revealing strain-sensitive magnetization control and spin refocusing effects under various voltages.

Contribution

It introduces an experimentally verified Monte Carlo model incorporating spin-orbit interactions for simulating spin transport in a nanoscale InGaAs spinFET.

Findings

Magnetization decay varies non-uniformly between source and gate.

High electric fields induce spin refocusing and magnetization recovery.

Strain doubles the magnetization of the drain current.

Abstract

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings is developed and applied to a spin field effect transistor (spinFET) operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a \SI{25}{nm} gate length \chem{In_{0.7}Ga_{0.3}As} metal-oxide-semiconductor field-effect transistor (MOSFET) with a CMOS compatible architecture. We observe non-uniform decay of the net magnetization between the source and gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and drain. We demonstrate coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current is strain-sensitive and can be increased twofold by strain induced into the channel.