Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures
S. Gies, M.J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J.V. Moloney,, S.W. Koch, and W. Heimbrodt
TL;DR
This study investigates the temperature-dependent band alignment in (Ga,In)As/Ga(As,Sb) heterostructures using photoluminescence spectroscopy and theoretical modeling, revealing unusual variations with temperature.
Contribution
It combines experimental PL spectroscopy with microscopic many-body theory and band structure calculations to analyze temperature-dependent band offsets in heterostructures.
Findings
Pronounced PL variations with temperature observed
Unusual temperature-dependent band alignment identified
Theory and experiment show good correlation
Abstract
A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the kp method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga,In)As and Ga(As,Sb) quantum wells.
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