Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R=Lu, Yb)
Xiaozhe Zhang, Yuewei Yin, Sen Yang, Zhimao Yang, Xiaoshan Xu

TL;DR
This study investigates how the interface between h-RFeO3 and Fe3O4 affects epitaxy and magnetism, revealing unique lattice matching and magnetic orientation behaviors that could benefit spintronic applications.
Contribution
It demonstrates the epitaxial growth of h-RFeO3 films on Fe3O4/Al2O3 substrates and uncovers the influence of interfaces on magnetic anisotropy and alignment.
Findings
Unusual Fe sub-lattice matching at the interface
Different magnetic easy axes for YbFeO3 and Fe3O4
Potential for spintronic device applications
Abstract
We have carried out the growth of h-RFeO3 (001) (R=Lu, Yb) thin films on Fe3O4 (111)/Al2O3 (001) substrates, and studied the effect of the h-RFeO3 (001)/Fe3O4 (111) interfaces on the epitaxy and magnetism. The observed epitaxial relations between h-RFeO3 and Fe3O4 indicates an unusual matching of Fe sub-lattices rather than a matching of O sub-lattices. The out-of-plane direction was found to be the easy magnetic axis for h-YbFeO3 (001) but the hard axis for Fe3O4 (111) in the h-YbFeO3 (001)/Fe3O4 (111)/Al2O3 (001) films, suggesting a perpendicular magnetic alignment at the h-YbFeO3 (001)/Fe3O4 (111) interface. These results indicate that Fe3O4 (111)/Al2O3 (001) could be a promising substrate for epitaxial growth of h-RFeO3 films of well-defined interface and for exploiting their spintronic properties.
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