Engineering Quantum Confinement in Semiconducting van der Waals Heterostructure
Ke Wang, Takashi Taniguchi, Kenji Watanabe, Philip Kim

TL;DR
This paper demonstrates the creation and control of quantum dots in atomically thin TMDC heterostructures, enabling quantum transport measurements and potential manipulation of spin and valley degrees of freedom for advanced 2D quantum devices.
Contribution
It introduces a method to realize well-controlled quantum confinement in TMDC heterostructures using gate-defined nanostructures and improved fabrication techniques.
Findings
Observation of quantized conductance in QPC channels
Single electron transport in TMDC quantum dots
Enhanced quality of TMDC 2DEGs for quantum measurements
Abstract
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) have the potential to add a unique additional control of quantum degrees of freedom owing to valley-spin locking of confined carriers near the band edges. However, due to prevailing inhomogeneities in the conducting channels, it has been difficult to realize quantum confinement in 2D TMDCs with well-controlled tunnel-coupling strength. Here we demonstrate quantum transport in lateral gate-defined 2D electron quantum dots formed in atomically thin TMDC heterostructures. Utilizing micro-fabricated local contact gates, encapsulation in 2D dielectrics and light illumination at low temperatures, we show that the quality of TMDC 2D…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Quantum and electron transport phenomena
