Gate-induced insulator to band-like transport transition in organolead halide perovskite

TL;DR

This study demonstrates a gate-induced transition from insulating to band-like charge transport in organolead halide perovskite microplates, revealing phase transition and defect density effects crucial for optoelectronic device performance.

Contribution

It introduces a novel fabrication method using monolayer graphene contacts and uncovers the phase-dependent charge transport transition in perovskites.

Findings

Charge transport transitions from insulator to band-like.

Transition depends on phase change temperature.

Defect density influences transport behavior.

Abstract

Understanding the intrinsic charge transport in organolead halide perovskites is essential for the development of high-efficiency photovoltaics and other optoelectronic devices. Despite the rapid advancement of the organolead halide perovskite in photovoltaic and optoelectronic applications, the intrinsic charge carrier transport in these materials remains elusive partly due to the difficulty of fabricating electrical devices and obtaining good electrical contact. Here, we report the fabrication of organolead halide perovskite microplates with monolayer graphene as low barrier electrical contact. A systematic charge transport studies reveal an insulator to band-like transport transition. Our studies indicate that the insulator to band-like transport transition depends on the orthorhombic-to-tetragonal phase transition temperature and defect densities of the organolead halide perovskite microplates. Our findings are not only important for the fundamental understanding of charge transport behavior but also offer valuable practical implications for photovoltaics and optoelectronic applications based on the organolead halide perovskite.