Engineering the structural and electronic phases of MoTe2 through W substitution
D. Rhodes, D. A. Chenet, B. E. Janicek, C. Nyby, Y. Lin, W. Jin, D., Edelberg, E. Mannebach, N. Finney, A. Antony, T. Schiros, T. Klarr, A., Mazzoni, M. Chin, Y.-c Chiu, W. Zheng, Q. R. Zhang, F. Ernst, J. I. Dadap, X., Tong, J. Ma, R. Lou, S. Wang, T. Qian, H. Ding

TL;DR
This study demonstrates how W substitution in MoTe2 can control its structural phases, enabling the engineering of its electronic properties for potential optoelectronic and topological applications.
Contribution
It reveals the phase diagram of Mo$_{1-x}$W$_x$Te$_2$ and shows that W doping stabilizes the $T_d$-phase at room temperature, combining semiconducting and topological features.
Findings
Only ~8% W stabilizes the $T_d$-phase at room temperature.
The $T_d$-phase has a Fermi surface similar to WTe$_2$.
Phase transition from semiconducting to semimetallic occurs with W doping.
Abstract
MoTe is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic phase, the semimetallic monoclinic phase, and the semimetallic orthorhombic structure. The phase displays a band gap of eV making it appealing for flexible and transparent optoelectronics. The phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new…
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