Computational Investigation of Half-Heusler Compounds for Spintronics Applications
Jianhua Ma, Vinay I. Hegde, Kamaram Munira, Yunkun Xie, Sahar, Keshavarz, David T. Mildebrath, C. Wolverton, Avik W. Ghosh, and W. H. Butler

TL;DR
This study uses first-principles calculations to explore the electronic, magnetic, and stability properties of 378 half-Heusler compounds, identifying promising candidates for spintronics based on their thermodynamic stability and electronic structure.
Contribution
It systematically predicts new stable half-Heusler compounds and correlates their electronic features with stability, aiding targeted synthesis for spintronics applications.
Findings
Identified 26 semiconductors, 45 half-metals, and 34 near half-metals with negative formation energy.
Predicted new thermodynamically stable compounds like NiScAs, RhTiP, and RuVAs.
Found that the presence of a gap at the Fermi energy correlates with compound stability.
Abstract
We present first-principles density functional calculations of the electronic structure, magnetism, and structural stability of 378 half-Heusler compounds (with Cr, Mn, Fe, Co, Ni, Ru, Rh, Ti, V, Cr, Mn, Fe, Ni, Al, Ga, In, Si, Ge, Sn, P, As, Sb). We find that a "Slater-Pauling density of states" with a gap or pseudogap at three states per atom below the gap in at least one spin channel is a common feature in half-Heusler compounds. We find that the presence of such a gap at the Fermi energy in one or both spin channels contributes greatly to the stability of a half-Heusler compound. We calculate the formation energy of each compound and systematically investigate its stability against all other phases in the Open Quantum Materials Database (OQMD). We represent the thermodynamic phase stability of each compound as its distance from the convex hull of stable…
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