Polarization memory in the nonpolar magnetic ground state of multiferroic CuFeO2
J. Beilsten-Edmands, S. J. Magorrian, F. R. Foronda, D. Prabhakaran,, P. G. Radaelli, R. D. Johnson

TL;DR
This study reveals that CuFeO2 retains a polarization memory in its nonpolar magnetic ground state, allowing recovery of ferroelectric polarization upon re-entering the ferroelectric phase, driven by magnetic or thermal history effects.
Contribution
It demonstrates a robust polarization memory effect in CuFeO2's magnetic ground state, supported by Monte Carlo simulations suggesting helical domain walls as the underlying mechanism.
Findings
Memory effect persists without external bias.
Polarization can be recovered after magnetic or thermal cycling.
Memory is unaffected by domain state or applied stress.
Abstract
We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically-induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase, we find that the nonpolar collinear antiferromagnetic ground state at B = 0 T retains a strong memory of the polarization magnitude and direction, such that upon re-entering the ferroelectric phase a net polarization of comparable magnitude to the initial polarization is recovered in the absence of external bias. This memory effect is very robust: in pulsed-magnetic-field measurements, several pulses into the ferroelectric phase with reverse bias are required to switch the polarization direction, with significant switching only seen after the system is driven out of the ferroelectric phase and ground state either magnetically (by application of B >…
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