Ultra-low material pixel layers for the Mu3e experiment
N. Berger, S. Dittmeier, L. Henkelmann, A. Herkert, F. Meier, Aeschbacher, Y.W. Ng, L.O.S. Noehte, A. Sch\"oning, D. Wiedner

TL;DR
This paper presents a low-material-budget pixel detector design for the Mu3e experiment, utilizing advanced thin sensors, flexible circuits, and helium cooling to achieve minimal radiation length.
Contribution
It introduces a novel combination of thinned HV-CMOS sensors, ultra-thin flexible circuits, and helium cooling to meet strict material budget requirements.
Findings
Achieved approximately 0.1% radiation length per pixel layer.
Demonstrated feasibility of using HV-CMOS technology for low-mass detectors.
Developed a cooling solution based on helium gas for minimal material impact.
Abstract
The upcoming Mu3e experiment will search for the charged lepton flavour violating decay of a muon at rest into three electrons. The maximal energy of the electrons is 53 MeV, hence a low material budget is a key performance requirement for the tracking detector. In this paper we summarize our approach to meet the requirement of about 0.1 % of a radiation length per pixel detector layer. This includes the choice of thinned active monolithic pixel sensors in HV-CMOS technology, ultra-thin flexible printed circuits, and helium gas cooling.
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