Interlayer Conductance of Graphene with Multiple Transfer Process

TL;DR

This study investigates the electrical conductance between graphene layers transferred multiple times, revealing that interlayer resistance varies exponentially with misalignment and is influenced by phonon-assisted tunneling.

Contribution

It demonstrates that interlayer conductance in multi-layer graphene without specific alignment follows an exponential distribution and is governed by phonon-assisted tunneling mechanisms.

Findings

Ohmic contacts with resistance variations over an order of magnitude.

Lattice angle between layers is the key source of conductance variation.

Interlayer conductance depends on temperature and twist angle, indicating phonon-assisted tunneling.

Abstract

Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers are observed with resistance variations of more than one order. With Raman spectroscopy we identify that the lattice angle between twisted graphene layers is the key variation source. The angular dependence and temperature dependence of the interlayer conductance suggest that a phonon assistant tunneling mechanism is valid for the interlayer transport of graphene prepared by multiple transfer process. We finally derive that the multi-layer graphene resistance shows an exponential-like distribution due to the random interlayer misalignments.