Imaging non-local electron transport via local excess noise
Qianchun Weng, Susumu Komiyama, Zhenghua An, Le Yang, Pingping Chen,, Svend-Age Biehs, Yusuke Kajihara, Wei Lu

TL;DR
This paper introduces a novel scanning noise microscope (SNoiM) that locally detects and maps excess noise at nano-scale resolution in quantum well devices, revealing non-local electron transport phenomena.
Contribution
The study demonstrates the first local detection and mapping of excess noise at THz frequencies using a noninvasive probe, enabling visualization of electron kinetics at nano-scale.
Findings
Achieved ~50nm spatial resolution in noise mapping.
Visualized non-local electron heating and hot-electron transfer.
Demonstrated applicability to various materials beyond conductors.
Abstract
Noise is usually a hindrance to signal detection. As stressed by Landauer, however, noise can be an invaluable signal that reveals kinetics of charge particles. Understanding local non-equilibrium electron kinetics at nano-scale is of decisive importance for the development of miniaturized electronic devices, optical nano-devices, and heat management devices. In non-equilibrium conditions electrons cause current fluctuation (excess noise) that contains fingerprint-like information about the electron kinetics. A crucial challenge is hence a local detection of excess noise and its real-space mapping. However, the challenge has not been tackled in existing noise measurements because the noise studied was the spatially integrated one. Here we report the experiment in which the excess noise at ultra-high-frequency(21.3THz), generated on GaAs/AlGaAs quantum well (QW) devices with a nano-scale…
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