Total Ionizing Dose and Synergistic Effect of Magnetoresistive Random Access Memory

TL;DR

This study investigates the effects of gamma-ray and electron beam irradiation on MRAM, focusing on total ionizing dose and the synergistic effects of magnetic fields, revealing that magnetic fields can reduce radiation damage.

Contribution

It provides new insights into how magnetic fields influence radiation damage mechanisms in MRAM, highlighting potential ways to improve radiation tolerance.

Findings

Magnetic field reduces synergistic radiation damage in MRAM.

Synergistic effects are smaller than TID effects in MRAM.

Radiation damage can be mitigated by magnetic field application.

Abstract

Magetoresistive Random Access Memory (MRAM) was irradiated by 60Co {\gamma}-rays and electron beam. The test of synergistic effect was performed under additional magnetic field when irradiation. We analyzed Total Ionizing Dose (TID) and synergistic damage mechanism of MRAM. DC, AC and function parameters of the memory were tested in radiation and annealing by Very Large Scale Integrated circuit (VLSI) test system. The radiation sensitive parameters were obtained through analyzing the data. Because magnetic field imposed on MRAM when the test of synergistic effect, Shallow Trench Isolation (STI) leakage or Frenkel-Poole emission of synergistic effect was smaller than that of TID, and radiation damage of synergistic effect was lower than that of TID.