The Miniband Alignment Field-Effect Transistor: a superlattice-based steep-slope nanowire FET

TL;DR

This paper introduces a superlattice-based nanowire FET that uses miniband alignment to achieve steep-slope switching with sub-60 mV/decade performance, promising energy-efficient transistor technology.

Contribution

It demonstrates a novel transistor design utilizing superlattice miniband alignment for steep-slope switching in nanowires.

Findings

Achieves sub-60 mV/decade switching in ballistic regime.

Uses superlattice miniband alignment for transistor control.

Potential for energy-efficient nanoelectronic devices.

Abstract

This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a transistor where the (mis-)alignment of its minibands turns the device on (off). It is shown that, in the ballistic current-regime, the transition between the on and off state occurs in a narrow gate-bias range, giving rise to sub-60 mV per decade switching behavior.