Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements
Nihar R. Pradhan, Carlos Garcia, Joshua Holleman, Daniel Rhodes,, Chason Parkera, Saikat Talapatra, Mauricio Terrones, Luis Balicas, and, Stephen A. McGill

TL;DR
This study demonstrates that multi-terminal measurements significantly enhance the observed photoconductivity in few-layer p-WSe2 transistors, revealing their greater potential for optoelectronic applications than previously reported.
Contribution
The paper introduces a multi-terminal measurement approach to accurately assess photoconductivity in p-WSe2 transistors, showing much higher responsivity and quantum efficiency than two-terminal methods.
Findings
Four-terminal configuration yields 370% higher responsivity.
External quantum efficiency increases to ~20000%.
Photoconductivity is severely underestimated in prior two-terminal studies.
Abstract
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively,…
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Taxonomy
Topics2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials
