Electronic and magnetic structures of hole doped trilayer La(4-x)Sr(x)Ni3O8 from first principles calculations
Lokanath Patra, M. R. Ashwin Kishore, R. Vidya, Anja O. Sjastad, H., Fjellvag, P. Ravindran

TL;DR
This study uses first-principles calculations to explore how hole doping affects the electronic and magnetic properties of trilayer La4Ni3O8, revealing an insulator-to-metal transition without changing magnetic order.
Contribution
It provides detailed insights into the electronic structure and phase stability of hole-doped La4Ni3O8 using advanced computational methods, highlighting differences from cuprate superconductors.
Findings
La4Ni3O8 is a C-type antiferromagnetic Mott insulator.
Hole doping induces an insulator-to-metal transition.
Ni ions remain in high spin states with an average valency of +1.33.
Abstract
The magnetic and electronic properties of trilayer La4Ni3O8, similar to hole doped cuprates, are investigated by performing full-potential linearized augmented plane wave method-based spin-polarized calculations with LDA and GGA functionals including Hubbard U parameters to account for strong correlation effects. Based on these calculations, we found that La4Ni3O8 is a C-type antiferromagnetic (C-AFM) Mott insulator in agreement with previous experimental and theoretical observations. Our calculations suggest that Ni1+ and Ni2+ ions are found to be in high spin state with an average valency of +1.33. Intermediate band gap states are originated from dz2 electrons of both types of Ni ions after including the strong correlation effects. In order to understand the role of hole doping on electronic structure, phase stability, and magnetic properties of La4Ni3O8, similar calculations have…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
