Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires

TL;DR

This paper reports on the demonstration of ultrafast, polarized single-photon emission from m-plane InGaN quantum dots on GaN nanowires, showing promising properties for quantum information applications.

Contribution

It introduces a new type of InGaN quantum dots with ultrafast emission and high polarization, embedded in nanowires, advancing quantum photonics technology.

Findings

Single-photon emission up to 100 K with g^2(0)=0.28 at 5 K

Radiative lifetimes of 260 +/- 55 ps indicating fast emission

High linear polarization degree of 0.84 +/- 0.12

Abstract

We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^2(0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.