Transport in a two-dimensional disordered electron liquid with isospin degrees of freedom
I.S. Burmistrov

TL;DR
This paper reviews recent theoretical insights into transport phenomena in two-dimensional disordered electron liquids with spin and isospin, explaining experimental resistivity behaviors and predicting new low-temperature resistivity phenomena.
Contribution
It provides a comprehensive review of theoretical results and explains experimental features, also predicting novel low-temperature resistivity behavior in systems with isospin.
Findings
Explanation of temperature dependence of resistivity in various quantum well structures
Prediction of new low-temperature resistivity behavior in isospin systems
Correlation of theoretical models with experimental observations
Abstract
Recent theoretical results on transport in a two-dimensional disordered electron liquid with spin and isospin degrees of freedom are reviewed. A number of experimental features in temperature dependence of resistivity at low temperatures in Si-MOSFET, n-AlAs quantum well and double quantum well heterostructures is explained. Novel behavior of low-temperature resistivity at low temperature in electron systems with isospin degrees of freedom are predicted.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
