BITLLES: Electron Transport Simulation with Quantum Trajectories
Guillermo Albareda, Damiano Marian, Abdelilah Benali, Alfonso, Alarc\'on, Simeon Moises, Xavier Oriols

TL;DR
The paper introduces BITLLES, a quantum electron transport simulation tool based on Bohmian trajectories, extending classical Monte Carlo methods to accurately model dynamic quantum behaviors like AC response and noise.
Contribution
It presents a novel Monte Carlo algorithm leveraging Bohmian mechanics for efficient quantum transport simulation in open systems, improving accuracy over traditional semi-classical methods.
Findings
Provides a quantitative description of quantum electron transport.
Extends classical Monte Carlo techniques to the quantum regime.
Offers a free, open-source software tool for advanced simulations.
Abstract
After the seminal work of R. Landauer in 1957 relating the electrical resistance of a conductor to its scattering properties, much progress has been made in our ability to predict the performance of electron devices in the DC (stationary) regime. Computational tools to describe their dynamical behavior (including the AC, transient and noise performance), however, are far from being as trustworthy as would be desired by the electronic industry. While there is no fundamental limitation to correctly modeling the high-frequency quantum transport and its fluctuations, certainly more careful attention must be paid to delicate issues such as overall charge neutrality, total current conservation, or the back action of the measuring apparatus. In this review, we will show how the core ideas behind the Bohmian formulation of quantum mechanics can be exploited to design an efficient Monte Carlo…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsQuantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Surface and Thin Film Phenomena
