Observation of Inverse Edelstein Effect in Rashba-Split 2DEG between SrTiO3 and LaAlO3 at Room Temperature

TL;DR

This study demonstrates room-temperature inverse Edelstein effect in a Rashba-split 2DEG at the SrTiO3/LaAlO3 interface, showing potential for spintronic applications through electric field manipulation.

Contribution

First observation of inverse Edelstein effect at room temperature in oxide interface 2DEG, highlighting its use for spin current generation and detection.

Findings

Inverse Edelstein effect observed at room temperature.

Spin voltage can be controlled by electric field.

Rashba-split 2DEG enables efficient charge-spin conversion.

Abstract

The Rashba physics has been intensively studied in the field of spin orbitronics, for the purpose of searching novel physical properties and the FM magnetization switching for technology applications. Here, we report the observation of the inverse Edelstein effect up to room temperature in the Rashba-split 2DEG between two insulating oxides SrTiO3 and LaAlO3 with the LaAlO3 layer thickness from 3 to 40 unit cells (UC). We further demonstrate that the spin voltage could be dramatically manipulated by electric field effect for the 2DEG between SrTiO3 and 3 UC LaAlO3. These results demonstrate that the Rashba-split 2DEG at the complex oxide interface can be used for room temperature efficient charge-and-spin conversion for the generation and detection of spin current.