Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation

TL;DR

This study systematically characterizes buried conductive micro-channels in single crystal diamond created by MeV ion implantation, analyzing how implantation parameters affect electrical properties like resistance and conduction behavior.

Contribution

It provides a comprehensive analysis of how ion species, energy, and fluence influence the electrical characteristics of implanted micro-channels in diamond.

Findings

Conductive micro-channels' resistance varies with implantation conditions.

IV characteristics follow a power-law trend with a consistent exponent.

Damage density correlates with electrical parameter changes.

Abstract

As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.