Spin-dependent transport and current modulation in a current-in-plane field-effect transistor

TL;DR

This paper introduces a novel spin-valve field-effect transistor with a trilayer structure that modulates resistance via magnetization and electric field, demonstrating potential for spintronic device applications.

Contribution

It reports the fabrication and operation of a GaMnAs-based CIP-SV-FET, showcasing resistance modulation and electric-field-assisted magnetization reversal, advancing spintronic device technology.

Findings

Resistance modulation by magnetization configuration

Electric-field-assisted magnetization reversal demonstrated

Device operates as a promising spintronic component

Abstract

We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.