Enhanced visible light absorption in ZnO/GaN heterostructured nanofilms
Yang Zhang, Zhi-Feng Wu, Peng-Fei Gao, Dang-Qi Fang, Sheng-Li Zhang

TL;DR
This study uses first-principles calculations to explore the stability and electronic properties of ZnO/GaN heterostructured nanofilms, revealing tunable band gaps and potential for visible-light photovoltaic applications.
Contribution
It provides new insights into the stability and electronic tunability of ZnO/GaN heterostructured nanofilms based on nanofilm thickness and GaN ratio.
Findings
Heterostructured nanofilms are less stable than pure ZnO but more stable than pure GaN.
Band gaps depend on GaN ratio and thickness, decreasing then increasing with GaN ratio.
Nanofilms exhibit spatial separation of electrons and holes, suitable for photovoltaic applications.
Abstract
ZnO/GaN alloys exhibit exceptional photocatalyst applications owing to the flexibly tunable band gaps that cover a wide range of the solar spectrum, and thus have attracted extensive attentions over the past few years. In this study, first-principles calculations were employed to investigate structural stabilities and electronic properties of (1-100) and (11-20) ZnO/GaN heterostructured nanofilms. The effects of nanofilm thickness and GaN ratio were explored. It was found that all studied heterostructured nanofilms were less stable than the corresponding pure ZnO film but more stable than pure GaN one, exhibiting a much thicker film with better stability. Electronic band structures displayed that both two types of (1-100) and (11-20) heterostructured nanofilms were semiconductors with band gaps strongly depending on the GaN ratios as well as the thicknesses. Of particular interesting is…
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