Voltage Controlled Memristor Threshold Logic Gates

TL;DR

This paper introduces a voltage-controlled memristor-based logic gate system that can implement universal logic functions, including NAND, NOR, XOR, and arithmetic operations, with advantages over traditional CMOS in area and power efficiency.

Contribution

It presents a novel resistive switching memristor cell with voltage-controlled threshold logic capable of implementing various logic functions and arithmetic units.

Findings

Successful implementation of NAND, NOR, XOR, and adder circuits using the memristor cell.

Significant reductions in device area, power dissipation, and leakage power compared to CMOS.

Demonstration of the system's versatility and efficiency in logic circuit design.

Abstract

In this paper, we present a resistive switching memristor cell for implementing universal logic gates. The cell has a weighted control input whose resistance is set based on a control signal that generalizes the operational regime from NAND to NOR functionality. We further show how threshold logic in the voltage-controlled resistive cell can be used to implement a XOR logic. Building on the same principle we implement a half adder and a 4-bit CLA (Carry Look-ahead Adder) and show that in comparison with CMOS-only logic, the proposed system shows significant improvements in terms of device area, power dissipation and leakage power.