Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

TL;DR

This paper demonstrates the selective enhancement of two closely spaced zero-phonon lines in silicon vacancy centers within silicon carbide using nanobeam photonic crystal cavities, achieving over 80-fold emission enhancement.

Contribution

It introduces a method to selectively enhance two specific ZPLs in silicon carbide defects using nanobeam photonic crystal cavities, advancing quantum photonics applications.

Findings

Achieved >80-fold Purcell enhancement of ZPLs

Fabricated 1D nanobeam photonic crystal cavities in silicon carbide

Analyzed cavity coupling to different zero-phonon lines

Abstract

Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.