Estimation of spin relaxation lengths in spin valves of In and In2O3 nanostructures

TL;DR

This study demonstrates electrical injection and detection of spin-polarized currents in In and In2O3 nanostructures, estimating their spin relaxation lengths, which are crucial for spintronic device applications.

Contribution

It reports the fabrication and measurement of spin valve devices using In and In2O3 nanostructures, providing the first estimates of their spin relaxation lengths.

Findings

Spin relaxation length in In nanostructures is approximately 450 nm.

Spin relaxation length in In2O3 nanostructures is approximately 789 nm.

Clear spin switching behavior observed at 10 K.

Abstract

We report the electrical injection and detection of spin polarized current in lateral ferromagnet-nonmagnet-ferromagnet spin valve devices, ferromagnet being cobalt and nonmagnet being indium (In) or indium oxide (In2O3) nanostructures. The In nanostructures were grown by depositing pure In on lithographically pre-patterned structures. In2O3 nanostructures were obtained by oxidation of In nanostructures. Spin valve devices were fabricated by depositing micro magnets over the nanostructures with connecting nonmagnetic electrodes via two steps of e-beam lithography. Clear spin switching behavior was observed in the both types of spin valve devices measured at 10 K. From the measured spin signal, the spin relaxation length ({\lambda}N) of In and In2O3 nanostructures were estimated to be 449.6 nm and 788.6 nm respectively.