Coherent destruction of tunneling in graphene irradiated by elliptically polarized lasers
Denis Gagnon, Fran\c{c}ois Fillion-Gourdeau, Joey Dumont, Catherine, Lefebvre, Steve MacLean

TL;DR
This paper theoretically investigates how elliptically polarized lasers can control photo-induced transitions in graphene, revealing a new way to suppress multiphoton resonances through Floquet engineering.
Contribution
It demonstrates that laser ellipticity can be used as a control parameter to selectively suppress tunneling in graphene, advancing understanding of Floquet-induced phenomena.
Findings
Ellipticity influences avoided crossing structures in Floquet quasi-energy levels.
Laser strength and ellipticity affect transition probabilities in graphene.
Ellipticity enables selective suppression of multiphoton resonances.
Abstract
Photo-induced transition probabilities in graphene are studied theoretically from the viewpoint of Floquet theory. Conduction band populations are computed for a strongly, periodically driven graphene sheet under linear, circular, and elliptic polarization. Features of the momentum spectrum of excited quasi-particles can be directly related to the avoided crossing of the Floquet quasi-energy levels. In particular, the impact of the ellipticity and the strength of the laser excitation on the avoided crossing structure -- and on the resulting transition probabilities -- is studied. It is shown that the ellipticity provides an additional control parameter over the phenomenon of coherent destruction of tunneling in graphene, allowing one to selectively suppress multiphoton resonances.
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