Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus
Chun-Hong Li, Yu-Jia Long, Ling-Xiao Zhao, Lei Shan, Zhi-An Ren,, Jian-Zhou Zhao, Hong-Ming Weng, Xi Dai, Zhong Fang, Gen-Fu Chen, and Cong Ren

TL;DR
This study investigates how black phosphorus undergoes a topological phase transition under pressure, revealing negative magnetoresistance driven by chiral anomaly effects associated with a Lifshitz transition.
Contribution
It demonstrates the pressure-induced topological Lifshitz transition in black phosphorus and links negative magnetoresistance to chiral anomaly effects in this material.
Findings
Black phosphorus transitions from a band semiconductor to a Dirac semimetal under pressure.
Negative magnetoresistance appears only in the B//I configuration during the transition.
Chiral anomaly contributes to the observed negative magnetoresistance.
Abstract
We report the anisotropic magneto-transport measurement on a non-compound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic pressures. The BP undergoes a topological Lifshitz transition from band semiconductor to a zero-gap Dirac semimetal state, characterized by a weak localization-weak antilocaliation transition at low magnetic fields and the emergence of a nontrivial Berry Phase of detected by SdH magneto-oscillations in magnetoresistance curves. In the transition region, we observe a pressure-dependent negative MR only in the B//I configuration. This negative longitudinal MR is attributed to the Adler-Bell-Jackiw anomaly (topological EB term) in the presence of weak antilocalization corrections.
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