Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

TL;DR

This paper evaluates the performance of novel edgeless n-on-p silicon pixel sensors with active trench technology, designed for the ATLAS HL-LHC upgrade, demonstrating promising radiation hardness and reduced dead area.

Contribution

It introduces and tests a new edgeless pixel sensor design with active trench technology for improved detector coverage in high-radiation environments.

Findings

Sensors show good performance in beam tests.

Active trench reduces dead area effectively.

Technology is suitable for HL-LHC upgrades.

Abstract

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.