Structure, ferromagnetic, dielectric and electronic features of the LaBiFe2O6 material

TL;DR

This study synthesizes and characterizes LaBiFe2O6, revealing its orthorhombic structure, ferromagnetic and ferroelectric properties at room temperature, and its semiconductor behavior with a specific energy gap.

Contribution

It provides a comprehensive analysis of LaBiFe2O6's structural, magnetic, dielectric, and electronic properties, highlighting its potential as a biferroic material with room-temperature ferromagnetism and ferroelectricity.

Findings

Orthorhombic perovskite structure confirmed by X-ray diffraction.

Material exhibits ferromagnetism and ferroelectricity at 300 K.

Semiconductor behavior with an energy gap of 2.17 eV.

Abstract

In this paper the synthesis and study of the structural, morphological, electrical, magnetic and electronic properties of the LaBiFe2O6 novel material are reported. The material was produced using the standard ceramic method. The Rietveld analysis of experimental data of x-ray diffraction showed that it synthesizes in an orthorhombic perovskite structure (Pnma, #62 space group). Two types of grain, micro and submicrometric, with the LaBiFe2O6 stoichiometry were identified by scanning electron microscopy and X-ray dispersive spectroscopy. Results of electrical polarization and dielectric constant ferroelectric suggest the occurrence of response of the material at room temperature. A T=300 K the material is ferromagnetic and exhibits an anomaly at T=258 K, which is attributed to anisotropy effects, suggesting the occurrence of biferroic behaviour. Results of diffuse reflectance suggest a semiconductor behaviour with energy gap Eg=2,17 eV, which is in agreement with calculations of band structure and density of states for one spin orientation, while for the other spin configuration calculations suggest a conductor feature.