Optical Writing of Magnetic Properties by Remanent Photostriction
V. Iurchuk, D. Schick, J. Bran, D. Colson, A. Forget, D. Halley, A., Koc, M. Reinhardt, C. Kwamen, N. A. Morley, M. Bargheer, M. Viret, R., Gumeniuk, G. Schmerber, B. Doudin, and B. Kundys

TL;DR
This paper demonstrates an optically induced, nonvolatile control of magnetic properties in a hybrid BiFeO3/Ni structure through remanent photostriction, enabling light-based writing and electrical erasing of magnetic states for low-power spintronic devices.
Contribution
It introduces a novel optical method to write and erase magnetic states in a hybrid material using remanent photostriction, advancing straintronics for memory applications.
Findings
75% change in coercivity achieved in Ni film
Magnetic properties can be written optically and erased electrically
Remanent photostriction enables nonvolatile magnetic control
Abstract
We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.
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