Comment on "Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]" by M. Kobayashi et al., arXiv:1608.07718
S. Souma, L. Chen, R. Oszwa{\l}dowski, T. Sato, F. Matsukura, T., Dietl, H. Ohno, and T. Takahashi

TL;DR
This paper refutes an alternative interpretation of ARPES data on GaMnAs, reaffirming that the Fermi level is within the valence band and supporting the p-d Zener model of ferromagnetism.
Contribution
The authors demonstrate that the band assignments by Kobayashi et al. are inconsistent with their ARPES data, reinforcing the valence band model for GaMnAs.
Findings
Fermi level resides inside the valence band
Band positions are inconsistent with the impurity-band model
Supports the p-d Zener model of ferromagnetism
Abstract
Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute ferromagnetic semiconductor (Ga,Mn)As. They claim that our ARPES data [Sci. Rep. 6, 27266 (2016); ref. 2] can be explained by locating the Fermi level EF above the valence-band top, supporting the impurity-band model of ferromagnetic (Ga,Mn)As. In this comment, we show that the assignment of bands' positions in respect to EF by Kobayashi et al. is not consistent with our data. By comparing the ARPES result to band-structure calculations, we demonstrate clearly that EF resides inside the valence band in accordance with the p-d Zener model.
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Taxonomy
TopicsElectron and X-Ray Spectroscopy Techniques · Ga2O3 and related materials · Surface and Thin Film Phenomena
