High-frequency, scaled MoS2 transistors

TL;DR

This paper investigates the scaling behavior of MoS2 transistors for RF applications, demonstrating high cutoff frequencies achieved through device miniaturization and improved contact engineering.

Contribution

It provides the first systematic analysis of scaled MoS2 RF transistors down to 40 nm gate length, highlighting the impact of edge-contacted injection on performance.

Findings

Achieved a cutoff frequency of 6 GHz before de-embedding.

Reached a cutoff frequency of 25 GHz after de-embedding.

Demonstrated the potential of MoS2 transistors for high-frequency applications.

Abstract

The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for electronic circuits based on 2D semiconductors on flexible and rigid substrates. Here, we present a systematic study of top-gated trilayer MoS2 RF transistors with gate lengths scaled down to 70 and 40 nm. In addition, by introducing edge-contacted injection of electrons in trilayer MoS2 devices, we decrease the contact resistance and as a result obtain the highest cutoff frequency of 6 GHz before the de-embedding procedure and 25 GHz after the de-embedding procedure.