Surface-gate-defined single-electron-transistor in a MoS$_{2}$ bilayer

TL;DR

This paper presents a multi-scale modeling approach combining density-functional theory and finite-element analysis to design a surface-gate-defined single-electron transistor in a MoS$_{2}$ bilayer, enabling electrostatic control of quantum dots.

Contribution

It introduces a novel design methodology for quantum electronic devices in 2D materials using surface gates and multi-scale modeling techniques.

Findings

Successful design of a surface-gate-defined quantum dot in MoS$_{2}$ bilayer

Demonstration of electrostatic tunability of tunnel barriers

Potential for new quantum electronic device architectures in 2D materials

Abstract

We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.