Reduction of Self-heating effect in LDMOS devices

TL;DR

This paper demonstrates through simulation that isotopic purification of group IV elements can significantly reduce the self-heating effect in LDMOS devices, lowering their average temperature by at least 25°C.

Contribution

The study introduces a simulation-based approach showing that isotopic purification enhances thermal conductivity and reduces self-heating in LDMOS devices.

Findings

At least 25°C reduction in LDMOS temperature achieved

Isotopic purification improves thermal management

Simulation confirms potential for better device reliability

Abstract

Isotopic purification of group IV elements leads to substantial increase in thermal conductivity due to reduced scattering of the phonons. Based on this concept, a simulation study is used to demonstrate the reduction of at least 25 oC in LDMOS average temperature.